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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION *With TO-126 package *High breakdown voltage *Large power dissipation APPLICATIONS *For medium power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 300 5 0.1 0.15 10 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE hFE-1 hFE-2 ICBO COB fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain Collector cut-off current Output capacitance Transition frequency CONDITIONS IC=100A;IE=0 IC=1mA; IB=0 IE=100A; IC=0 IC=100mA IB=10m A IC=50mA ; VCE=10V IC=10mA ; VCE=10V IC=50mA ; VCE=10V VCB=300V ; IE=0 IE=0; VCB=30V;f=1MHz IE=20mA ; VCB=30V 8 55 30 30 MIN 300 300 5 TYP. 2SC1501 MAX UNIT V V V 5.0 1.2 V V 200 100 A pF MHz hFE-2 classifications P 30-60 Q 50-100 R 80-150 S 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1501 Fig.2 outline dimensions 3 |
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